Transistor level modeling for analog/RF IC design / edited by Wladyslaw Grabinski, Bart Nauwelaers and Dominique Schreurs. - Dordrecht : Springer, c2006. - xiii, 293 p. : ill. ; 25 cm.

Print version:
Transistor level modeling for analog/RF IC design.
Dordrecht : Springer, c2006
(OCoLC)68629648

Includes bibliographical references and index.

Foreword; H.Iwai Introduction; W.Grabinski/ B.Nauwelaers/ D.Schreurs 1. 2/3D process and devices simulation; D.Donoval/ A.Vrbicky/ A.Chvala/P.Beno 2. PSP: An advanced surface-potential-based mosfet model; R.van Langevelde/ G.Gildenblat 3. EKV 3.0 mosfet model; M.Bucher/ A.Bazigos/ F.Drummenacher/ J-M.Sallese/ C.Enz 4. Modeling using high-frequency measurements; D.Schreurs 5. Empirical FET Models; I.Angelov 6. Modeling the SOI MOSFET Nonlinearities; B.Parvais/ A.Siligaris 7. Circuit level RF modeling and design; N.Itoh 8. On incorporating parasitic quantum effects in classical circuits simulations; F.Felgenhauer/ M.Begoin/ W.Mathis 9. Compact modeling of the MOSFET in VHDL-AMS; C.Lallement/ F.Pecheux/ A.Vachoux/ F.Pregaldiny 10. Compact modeling in Verilog-A; B.Troyanovsky/ P.O'Halloran/ M.Mierzwinski Index Table of contents

Summary:
Presents practical knowledge in the field of MOS transistor modeling. This book covers the 2/3D process and device simulations with a focus on high-voltage MOSFET devices, the development of both PSP Read more...




1402045557 (hd. bd.) 9781402045554 (hd. bd.) 9048171482

2007464825


Metal oxide semiconductor field-effect transistors.
Integrated circuits.
Metal oxide semiconductors.

TK7871.95 / .T73 2006

621.3815 / TRA 2006

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