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Transistor level modeling for analog/RF IC design / edited by Wladyslaw Grabinski, Bart Nauwelaers and Dominique Schreurs.

Contributor(s): Grabinski, Władysław | Nauwelaers, Bart | Schreurs, Dominique.
Material type: TextTextPublisher: Dordrecht : Springer, c2006Description: xiii, 293 p. : ill. ; 25 cm.ISBN: 1402045557 (hd. bd.); 9781402045554 (hd. bd.); 9048171482 .Subject(s): Metal oxide semiconductor field-effect transistors | Integrated circuits | Metal oxide semiconductorsDDC classification: 621.3815 Online resources: WorldCat details | E-Book Fulltext
Contents:
Table of contents Foreword; H.Iwai Introduction; W.Grabinski/ B.Nauwelaers/ D.Schreurs 1. 2/3D process and devices simulation; D.Donoval/ A.Vrbicky/ A.Chvala/P.Beno 2. PSP: An advanced surface-potential-based mosfet model; R.van Langevelde/ G.Gildenblat 3. EKV 3.0 mosfet model; M.Bucher/ A.Bazigos/ F.Drummenacher/ J-M.Sallese/ C.Enz 4. Modeling using high-frequency measurements; D.Schreurs 5. Empirical FET Models; I.Angelov 6. Modeling the SOI MOSFET Nonlinearities; B.Parvais/ A.Siligaris 7. Circuit level RF modeling and design; N.Itoh 8. On incorporating parasitic quantum effects in classical circuits simulations; F.Felgenhauer/ M.Begoin/ W.Mathis 9. Compact modeling of the MOSFET in VHDL-AMS; C.Lallement/ F.Pecheux/ A.Vachoux/ F.Pregaldiny 10. Compact modeling in Verilog-A; B.Troyanovsky/ P.O'Halloran/ M.Mierzwinski Index
Summary: Summary: Presents practical knowledge in the field of MOS transistor modeling. This book covers the 2/3D process and device simulations with a focus on high-voltage MOSFET devices, the development of both PSP Read more...
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Item type Current location Collection Call number Copy number Status Date due Barcode Item holds
E-Book E-Book EWU Library
E-book
Non-fiction 621.3815 TRA 2006 (Browse shelf) Not for loan
Text Text EWU Library
Reserve Section
Non-fiction 621.3815 TRA 2006 (Browse shelf) C-1 Not For Loan 22004
Total holds: 0

Print version:
Transistor level modeling for analog/RF IC design.
Dordrecht : Springer, c2006
(OCoLC)68629648

Includes bibliographical references and index.

Table of contents Foreword; H.Iwai Introduction; W.Grabinski/ B.Nauwelaers/ D.Schreurs 1. 2/3D process and devices simulation; D.Donoval/ A.Vrbicky/ A.Chvala/P.Beno 2. PSP: An advanced surface-potential-based mosfet model; R.van Langevelde/ G.Gildenblat 3. EKV 3.0 mosfet model; M.Bucher/ A.Bazigos/ F.Drummenacher/ J-M.Sallese/ C.Enz 4. Modeling using high-frequency measurements; D.Schreurs 5. Empirical FET Models; I.Angelov 6. Modeling the SOI MOSFET Nonlinearities; B.Parvais/ A.Siligaris 7. Circuit level RF modeling and design; N.Itoh 8. On incorporating parasitic quantum effects in classical circuits simulations; F.Felgenhauer/ M.Begoin/ W.Mathis 9. Compact modeling of the MOSFET in VHDL-AMS; C.Lallement/ F.Pecheux/ A.Vachoux/ F.Pregaldiny 10. Compact modeling in Verilog-A; B.Troyanovsky/ P.O'Halloran/ M.Mierzwinski Index

Summary:
Presents practical knowledge in the field of MOS transistor modeling. This book covers the 2/3D process and device simulations with a focus on high-voltage MOSFET devices, the development of both PSP Read more...

Electrical & Electronic Engineering

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