Fundamentals of III-V semiconductor MOSFETs / edited by Serge Oktyabrsky, Peide Ye.

Contributor(s): Oktyabrsky, Serge | Ye, Peide D
Material type: TextTextLanguage: English Publisher: New York : Springer, c2010Description: xv, 445 p. : ill. ; 24 cmISBN: 9781441915467 (alk. paper); 144191546X (alk. paper); 9781441915474 (eISBN)Subject(s): Metal oxide semiconductor field-effect transistors -- Design and construction | Electronic circuit designDDC classification: 621.3815284 FUN LOC classification: TK7871.95 | .F86 2010Online resources: OCLC | Ebook Fulltext
Contents:
Towards III-V digital MOSFET circuits.- Physics of compound semiconductors: band-engineered heterostructures and strain effects.- Physics and modeling of compound semiconductor MOSFETs.- P-channel MOSFETs.- Compound semiconductor technology: MBE and MOCVD.- Properties and trade-offs of compound semiconductor MOSFETs.- Electronic structure and properties of high-k gate oxides.- Interface chemistry of III-V's with oxides.- Heterostructure FETs for digital circuits.- Interface passivation techniques.- Source/drain contact technologies.- MOSFETs with Ga2O3 gate oxide.- MOSFETs with ALD high-k oxides.- Narrow bandgap MOSFETs: InAs and InSb as channel materials.- GaN based MOSFETs.- Electrical measurement issues for gate stacks and FETs.- Circuits with III-V MOSFETs.
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Non-fiction 621.3815284 FUN 2010 (Browse shelf) Not for loan
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Subjects
Metal oxide semiconductor field-effect transistors -- Design and construction.
Electronic circuit design.

Includes bibliographical references and index.

Towards III-V digital MOSFET circuits.- Physics of compound semiconductors: band-engineered heterostructures and strain effects.- Physics and modeling of compound semiconductor MOSFETs.- P-channel MOSFETs.- Compound semiconductor technology: MBE and MOCVD.- Properties and trade-offs of compound semiconductor MOSFETs.- Electronic structure and properties of high-k gate oxides.- Interface chemistry of III-V's with oxides.- Heterostructure FETs for digital circuits.- Interface passivation techniques.- Source/drain contact technologies.- MOSFETs with Ga2O3 gate oxide.- MOSFETs with ALD high-k oxides.- Narrow bandgap MOSFETs: InAs and InSb as channel materials.- GaN based MOSFETs.- Electrical measurement issues for gate stacks and FETs.- Circuits with III-V MOSFETs.

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