Fundamentals of III-V semiconductor MOSFETs / edited by Serge Oktyabrsky, Peide Ye.
Material type:
TextLanguage: English Publication details: New York : Springer, c2010. Description: xv, 445 p. : ill. ; 24 cmISBN: 9781441915467 (alk. paper); 144191546X (alk. paper); 9781441915474 (eISBN)Subject(s): Metal oxide semiconductor field-effect transistors -- Design and construction | Electronic circuit designDDC classification: 621.3815284 FUN LOC classification: TK7871.95 | .F86 2010Online resources: OCLC | Ebook Fulltext | Item type | Current library | Collection | Call number | Copy number | Status | Date due | Barcode | Item holds |
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EWU Library E-book | Non-fiction | 621.3815284 FUN 2010 (Browse shelf(Opens below)) | Not for loan | ||||
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EWU Library Reserve Section | Non-fiction | 621.3815284 FUN 2010 (Browse shelf(Opens below)) | C-1 | Not For Loan | 25211 |
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| 621.3815 TOT 1994 Schaum's outline of theory and problems of digital principles / | 621.3815 TRA 2006 Transistor level modeling for analog/RF IC design / | 621.38152 MAF 2004 Fundamentals of semiconductor fabrication / | 621.3815284 FUN 2010 Fundamentals of III-V semiconductor MOSFETs / | 621.3815284 MAS 2007 Strained-Si heterostructure field effect devices / | 621.381531 BRI 2003 Signal integrity issues and printed circuit board design / | 621.381535 ELE Electronic devices and amplifier circuits with MATLAB applications |
Subjects
Metal oxide semiconductor field-effect transistors -- Design and construction.
Electronic circuit design.
Includes bibliographical references and index.
Towards III-V digital MOSFET circuits.- Physics of compound semiconductors: band-engineered heterostructures and strain effects.- Physics and modeling of compound semiconductor MOSFETs.- P-channel MOSFETs.- Compound semiconductor technology: MBE and MOCVD.- Properties and trade-offs of compound semiconductor MOSFETs.- Electronic structure and properties of high-k gate oxides.- Interface chemistry of III-V's with oxides.- Heterostructure FETs for digital circuits.- Interface passivation techniques.- Source/drain contact technologies.- MOSFETs with Ga2O3 gate oxide.- MOSFETs with ALD high-k oxides.- Narrow bandgap MOSFETs: InAs and InSb as channel materials.- GaN based MOSFETs.- Electrical measurement issues for gate stacks and FETs.- Circuits with III-V MOSFETs.
Pharmacy
Tahur Ahmed
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