TY - BOOK AU - Huff,Howard R. AU - Gilmer,D.C. TI - High dielectric constant materials: VLSI MOSFET applications T2 - Springer series in advanced microelectronics, SN - 3540210814 (hbk.) AV - TK7874 .H52414 2005 U1 - 621.395 PY - 2005/// CY - Berlin, New York PB - Springer KW - Integrated circuits KW - Very large scale integration KW - Semiconductors KW - Gate array circuits KW - Materials KW - Congresses KW - Dielectrics N1 - Includes bibliographical references and index; TOC; 1. The economic implications of Moore's law -- Part I. Classical regime for SiO₂ -- 2. Brief notes on the history of gate dielectrics in MOS devices -- 3. SiO₂ based MOSFETS: Film growth and Si-SiO₂ interface properties -- 4. Oxide reliability issues -- Part II. Transition to silicon oxynitrides -- 5. Gate dielectric scaling to 2.0-1.0 nm: SiO₂ and silicon oxynitride -- 6. Optimal scaling methodologies and transistor performance -- 7. Silicon oxynitride gate dielectric for reducing gate leakage and boron penetration prior to high-k gate dielectric implementation -- Part III. Transition to high-k gate dielectrics -- 8. Alternative dielectrics for silicon-based transistors: Selection via multiple criteria -- 9. Materials issues for high-k gate dielectric selection and integration -- 10. Designing interface composition and structure in high dielectric constant gate stacks -- 11. Electronic structure of alternative high-k dielectrics -- 12. Physicochemical properties of selected 4d, 5d, and rare earth metals in silicon -- 13. High-k gate dielectric deposition technologies -- 14. Issues in metal gate electrode selection for bulk CMOS devices -- 15. CMOS IC fabrication issues for high-k gate dielectric and alternate electrode materials -- 16. Characterization and metrology of medium dielectric constant gate dielectric films -- 17. Electrical measurement issues for alternative gate stack systems -- 18. High-k gate dielectric materials integrated circuit device design issues -- Part IV. Future directions for ultimate scaling technology generations -- 19. High-k crystalline gate dielectrics: A research perspective -- 20. High-k crystalline gate dielectrics: An IC manufacturer's perspective -- 21. Advanced MOS-devices; EEE N2 - Summary: Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). This book includes topics such as: a review of Moore's Law; the classical regime for SiO2 gate dielectrics; and the transition to silicon oxynitride gate dielectrics UR - http://www.loc.gov/catdir/enhancements/fy0816/2004105869-d.html UR - http://www.loc.gov/catdir/enhancements/fy0816/2004105869-t.html UR - http://www.worldcat.org/title/high-dielectric-constant-materials-vlsi-mosfet-applications/oclc/56755279&referer=brief_results UR - http://lib.ewubd.edu/ebook/6505 ER -