High dielectric constant materials : VLSI MOSFET applications / H.R. Huff, D.C. Gilmer (eds.).

Contributor(s): Huff, Howard R | Gilmer, D. C. (David C.)Material type: Text

TextLanguage: English Series: Springer series in advanced microelectronicsPublication details: Berlin ; New York : Springer, c2005. Description: xxiv, 710 p. : ill. ; 25 cmISBN: 3540210814 (hbk.); 9783540210818Other title: VLSI MOSFET applicationsSubject(s): Integrated circuits -- Very large scale integration | Semiconductors | Gate array circuits -- Materials -- Congresses | DielectricsDDC classification: 621.395 LOC classification: TK7874 | .H52414 2005Online resources: Publisher description | Table of contents only | Worldcat details | Ebook Fulltext

Contents:

TOC 1. The economic implications of Moore's law -- Part I. Classical regime for SiO₂ -- 2. Brief notes on the history of gate dielectrics in MOS devices -- 3. SiO₂ based MOSFETS: Film growth and Si-SiO₂ interface properties -- 4. Oxide reliability issues -- Part II. Transition to silicon oxynitrides -- 5. Gate dielectric scaling to 2.0-1.0 nm: SiO₂ and silicon oxynitride -- 6. Optimal scaling methodologies and transistor performance -- 7. Silicon oxynitride gate dielectric for reducing gate leakage and boron penetration prior to high-k gate dielectric implementation -- Part III. Transition to high-k gate dielectrics -- 8. Alternative dielectrics for silicon-based transistors: Selection via multiple criteria -- 9. Materials issues for high-k gate dielectric selection and integration -- 10. Designing interface composition and structure in high dielectric constant gate stacks -- 11. Electronic structure of alternative high-k dielectrics -- 12. Physicochemical properties of selected 4d, 5d, and rare earth metals in silicon -- 13. High-k gate dielectric deposition technologies -- 14. Issues in metal gate electrode selection for bulk CMOS devices -- 15. CMOS IC fabrication issues for high-k gate dielectric and alternate electrode materials -- 16. Characterization and metrology of medium dielectric constant gate dielectric films -- 17. Electrical measurement issues for alternative gate stack systems -- 18. High-k gate dielectric materials integrated circuit device design issues -- Part IV. Future directions for ultimate scaling technology generations -- 19. High-k crystalline gate dielectrics: A research perspective -- 20. High-k crystalline gate dielectrics: An IC manufacturer's perspective -- 21. Advanced MOS-devices.

Summary: Summary: Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). This book includes topics such as: a review of Moore's Law; the classical regime for SiO2 gate dielectrics; and the transition to silicon oxynitride gate dielectrics.

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Holdings
Item type	Current library	Collection	Call number	Copy number	Status	Barcode
E-Book	Dr. S. R. Lasker Library, EWU E-book	Non-fiction	621.395 HIG 2005 (Browse shelf(Opens below))		Not for loan
Text	Dr. S. R. Lasker Library, EWU Reserve Section	Non-fiction	621.3815 HIG 2005 (Browse shelf(Opens below))	C-1	Not For Loan	23868
Text	Dr. S. R. Lasker Library, EWU Circulation Section	Non-fiction	621.3815 HIG 2005 (Browse shelf(Opens below))	C-2	Available	23869

Total holds: 0

Includes bibliographical references and index.

TOC 1. The economic implications of Moore's law --
Part I. Classical regime for SiO₂ --
2. Brief notes on the history of gate dielectrics in MOS devices --
3. SiO₂ based MOSFETS: Film growth and Si-SiO₂ interface properties --
4. Oxide reliability issues --
Part II. Transition to silicon oxynitrides --
5. Gate dielectric scaling to 2.0-1.0 nm: SiO₂ and silicon oxynitride --
6. Optimal scaling methodologies and transistor performance --
7. Silicon oxynitride gate dielectric for reducing gate leakage and boron penetration prior to high-k gate dielectric implementation --
Part III. Transition to high-k gate dielectrics --
8. Alternative dielectrics for silicon-based transistors: Selection via multiple criteria --
9. Materials issues for high-k gate dielectric selection and integration --
10. Designing interface composition and structure in high dielectric constant gate stacks --
11. Electronic structure of alternative high-k dielectrics --
12. Physicochemical properties of selected 4d, 5d, and rare earth metals in silicon --
13. High-k gate dielectric deposition technologies --
14. Issues in metal gate electrode selection for bulk CMOS devices --
15. CMOS IC fabrication issues for high-k gate dielectric and alternate electrode materials --
16. Characterization and metrology of medium dielectric constant gate dielectric films --
17. Electrical measurement issues for alternative gate stack systems --
18. High-k gate dielectric materials integrated circuit device design issues --
Part IV. Future directions for ultimate scaling technology generations --
19. High-k crystalline gate dielectrics: A research perspective --
20. High-k crystalline gate dielectrics: An IC manufacturer's perspective --
21. Advanced MOS-devices.

Summary:
Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). This book includes topics such as: a review of Moore's Law; the classical regime for SiO2 gate dielectrics; and the transition to silicon oxynitride gate dielectrics.

EEE

Tahur Ahmed

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