Nanoscale MOS transistors : semi-classical transport and applications / David Esseni, Pierpaolo Palestri, Luca Selmi.
Material type: TextLanguage: English Publication details: Cambridge ; New York : Cambridge University Press, c2011. Description: xvii, 470 p. : ill. ; 26 cmISBN: 9780521516846 (hardback); 0521516846Subject(s): Metal oxide semiconductors -- Design and construction | Electron transport | NanoelectronicsDDC classification: 004.53 LOC classification: TK7871.99.M44 | E76 2011Other classification: TEC008080 Online resources: WorldCat details | E-book FulltextItem type | Current library | Collection | Call number | Copy number | Status | Date due | Barcode | Item holds |
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E-Book | Dr. S. R. Lasker Library, EWU E-book | Non-fiction | 004.53 ESN 2011 (Browse shelf(Opens below)) | Not for loan | ||||
Text | Dr. S. R. Lasker Library, EWU Reserve Section | Non-fiction | 004.53 ESN 2011 (Browse shelf(Opens below)) | C-1 | Not For Loan | 24454 | ||
Text | Dr. S. R. Lasker Library, EWU Reserve Section | Non-fiction | 004.53 ESN 2011 (Browse shelf(Opens below)) | C-2 | Not For Loan | 24455 | ||
Text | Dr. S. R. Lasker Library, EWU Circulation Section | Non-fiction | 004.53 ESN 2011 (Browse shelf(Opens below)) | C-3 | Available | 24456 | ||
Text | Dr. S. R. Lasker Library, EWU Circulation Section | Non-fiction | 004.53 ESN 2011 (Browse shelf(Opens below)) | C-4 | Available | 24457 | ||
Text | Dr. S. R. Lasker Library, EWU Circulation Section | Non-fiction | 004.53 ESN 2011 (Browse shelf(Opens below)) | C-5 | Available | 25389 |
Includes bibliographical references and index.
TOC 1. Introduction; 2. Bulk semiconductors and the semi-classical model; 3. Quantum confined inversion layers; 4. Carrier scattering in silicon MOS transistors; 5. The Boltzmann transport equation; 6. The Monte Carlo method for the Boltzmann transport equation; 7. Simulation of bulk and SOI silicon MOSFETs; 8. MOS transistors with arbitrary crystal orientation; 9. MOS transistors with strained silicon channels; 10. MOS transistors with alternative materials; Appendix A. Mathematical definitions and properties; Appendix B. Integrals and transformations over a finite area A; Appendix C. Calculation of the equi-energy lines with the k-p model; Appendix D. Matrix elements beyond the envelope function approximation; Appendix E. Charge density produced by a perturbation potential.
"Written from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, illustrations and examples connect the methods described to all the latest issues in nanoscale MOSFET design. Key areas covered include: Transport in arbitrary crystal orientations and strain conditions, and new channel and gate stack materials All the relevant transport regimes, ranging from low field mobility to quasi-ballistic transport, described using a single modeling framework Predictive capabilities of device models, discussed with systematic comparisons to experimental results"--
CSE
Saifun Momota
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